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Silicon Carbide (SiC) MOSFET, M1, TO-247-4L 1700 V, 28 mOhm, NTH4L028N170M1 Datasheet, NTH4L028N170M1 circuit, NTH4L028N170M1 data sheet : ONSEMI, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
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Buy onsemi NTH4L028N170M1 in Avnet APAC. View Substitutes & Alternatives along with datasheets, stock, pricing and search for other Silicon Carbide (SiC) MOSFETs & Modules products. Inactivity Warning Dialog. Close Modal. Your session is about to timeout due to inactivity. Click OK to extend your time for an additional 30 minutes.
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onsemi NTH4L028N170M1 1700V EliteSiC MOSFET provides reliable, high-efficiency performance for energy infrastructure and industrial drive applications. Přeskočit na Hlavní obsah +420 517070880
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At a test condition of 1200V at 40A, the 1700V EliteSiC MOSFET achieves a gate charge (Q g) of 200nC, compared to equivalent competitive devices that are closer to 300nC.A low Q g is critical to achieving high efficiency in fast switching, high-power renewable energy applications.. The onsemi NTH4L028N170M1 1700V EliteSiC MOSFET is housed in a …
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It is a high-efficiency silicon carbide (SiC) MOSFET rated for 1700V. The NTH4L028N170M1 offers reliable, high-efficiency performance for energy infrastructure and industrial drive applications. It is optimized for fast-switching applications. The planar technology works reliably with negative gate voltage drives and turns off spikes on the gate.
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900 $29.5918. 450 $31.7055. Show All. Buy Now. NTH4L028N170M1 price and availability organized by top electronic component distributors and suppliers.
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14,(SiC)"EliteSiC",(CES),EliteSiC1700V EliteSiC MOSFET。1700V EliteSiC MOSFET(NTH4L028N170M1),(BV)SiC。
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NTH4L028N170M1 onsemi MOSFET SIC 1700V MOS 28MO IN TO247-4L datasheet, inventory & pricing.
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The NTH4L028N170M1 from onsemi is a MOSFET with Continous Drain Current 57 A, Drain Source Resistance 40 milliohm, Drain Source Breakdown Voltage …
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Find the best pricing for onsemi NTH4L028N170M1 by comparing bulk discounts per 1,000. Octopart is the world's source for onsemi NTH4L028N170M1 availability, pricing, and technical specs and other electronic parts
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The NTH4L028N170M1 from onsemi is a MOSFET with Continous Drain Current 57 A, Drain Source Resistance 40 milliohm, Drain Source Breakdown Voltage 1700 V, Gate Source Voltage -15 to 25 V, Gate Source Threshold Voltage 4.3 V. Tags: Through Hole. More details for NTH4L028N170M1 can be seen below.
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Onsemi NTH4L028N170M1 1700V EliteSiC MOSFETは、エネルギーインフラとアプリケーションをに、がくのいをしています。 onsemi …
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NTH4L028N170M1 onsemi MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L katalogový list, zásoby a ceny. Přeskočit na Hlavní obsah +420 517070880. Kontaktovat Mouser (Brno) +420 517070880 | Podněty. Změnit místo. Čeština. English; CZK. Kč CZK € EUR $ USD Česká Republika.
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nth4l028n170m1 disti # nth4l028n170m1 onsemi Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L (Alt: NTH4L028N170M1) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 46 Weeks, 0 Days
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NTH4L028N170M1 - onsemi. Video Transcript . onsemi NTH4L028N170M1 MOSFETs. Trans MOSFET N-CH SiC 1.7KV 81A 4-Pin(4+Tab) TO-247 Tube. Download Datasheet. Symbols and Footprints. Buy Options Information. Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L. EU RoHS: Compliant with Exemption : ECCN (US) …
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NTH4L028N170M1 1700V EliteSiC MOSFET、。 EliteSiC MOSFET, …
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NTH4L028N170M1. 1 cart items. Signal Conditioning & Control Custom & ASSP Interfaces Wireless Connectivity. Silicon Carbide (SiC) MOSFETs Power Modules Protected …
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onsemi NTH4L028N170M1 1700V EliteSiC MOSFET provides reliable, high-efficiency performance for energy infrastructure and industrial drive applications. …
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NTH4L028N170M1. 1 cart items. Signal Conditioning & Control Custom & ASSP Interfaces Wireless Connectivity. Silicon Carbide (SiC) MOSFETs Power Modules Protected MOSFETs Rectifiers Audio Transistors Darlington Transistors ESD Protection Diodes JFETs Small Signal Switching Diodes Zener Diodes RF Transistors RF Diodes IGBTs.
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NTH4L028N170M1/D Silicon Carbide (SiC) MOSFET, M1, TO-247-4L 1700 V, 28 mOhm NTH4L028N170M1 Features € Typ. RDS(on) = 28 m @ VGS = 20 V € Ultra Low Gate Charge (QG(tot) = 200 nC) € High Speed Switching with Low Capacitance (Coss = 200 pF) € 100% Avalanche Tested € These Devices are Pbï Free and are RoHS Compliant …
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Buy NTH4L028N170M1 - Onsemi - Silicon Carbide MOSFET, Single, N Channel, 81 A, 1.7 kV, 0.028 ohm, TO-247. Newark offers fast quotes, same day shipping, fast delivery, …
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Products. Interfaces. High Performance Optocouplers. High Performance Transistor Optocouplers. High Speed Logic Gate Optocouplers. Low Voltage, High Performance Optocouplers. Specific Function Optocouplers.
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onsemi NTH4L028N170M1 1700V EliteSiC MOSFET. Provides reliable, high-efficiency performance for energy and industrial drive applications. Learn More about onsemi NTH4L028N170M1 1700V EliteSiC MOSFET View Products related to onsemi NTH4L028N170M1 1700V EliteSiC MOSFET. onsemi D1 EliteSiC Diodes ...
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onsemi. Manufacturer Product Number. NTH4L028N170M1. Description. SIC MOSFET 1700 V 28 MOHM M1 SER. Manufacturer Standard Lead Time. 46 Weeks. Detailed …
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NTH4L028N170M1/D Silicon Carbide (SiC) MOSFET – EliteSiC, 28mohm, 1700V, M1, TO-247-4L NTH4L028N170M1 Features • Typ. RDS(on) = 28 m @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 200 nC) • High Speed Switching with Low Capacitance (Coss = 200 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant …
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onsemi. Manufacturer Product Number. NTH4L028N170M1. Description. SIC MOSFET 1700 V 28 MOHM M1 SER. Manufacturer Standard Lead Time. 46 Weeks. Detailed Description. N-Channel 1700 V 81A (Tc) 535W (Tc) Through Hole TO-247-4L.
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Capacity Expansion. We have opened the world's largest Silicon Carbide fabrication facility in Marcy, New York. This brand new, state-of-the-art power wafer fab will be automotive-qualified and 200mm-capable.
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Buy onsemi NTH4L028N170M1 in Avnet Americas. View Substitutes & Alternatives along with datasheets, stock, pricing and search for other Silicon Carbide (SiC) MOSFETs & …
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NTH4L028N170M1 1700V EliteSiC MOSFET onsemi NTH4L028N170M1 1700V EliteSiC MOSFET provides reliable, high-efficiency performance for energy infrastructure and industrial drive applications. The onsemi EliteSiC MOSFET features Planar technology that works reliably with negative gate voltage drives and turns off spikes on the gate. This …
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