- +8618437960706
- دوشنبه تا شنبه: 10:00 - 16:00 / یکشنبه تعطیل است
Infineon has a market-leading role as a high-quality and high-volume supplier to the automotive industry. Infineon is preparing for the accelerated demand of the industry with significant investments. In …
به خواندن ادامه دهید
Infineon expects its SiC semiconductor sales to grow by more than 60 percent on average per year, reaching approximately $1 billion by mid-decade. For the second half of the decade, Infineon expects on-going growth momentum, for which it invests in its recently announced additional manufacturing block in Kulim, Malaysia.
به خواندن ادامه دهید
Infineon's SiC manufacturing capacity is about to increase tenfold by 2027. A new plant in Kulim is scheduled to start production in 2024. Today, Infineon already provides SiC semiconductors to more than 3,600 customers worldwide. About Infineon Further information is available at
به خواندن ادامه دهید
650 V up to 2000 V CoolSiC™ MOSFET discretes ideally suited for hard- and resonant-switching topologies. Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC™ MOSFET portfolio ...
به خواندن ادامه دهید
Infineon = Toshiba > ON Semi Peak: Toshiba > Infineon = ON Semi Heavy Load: ON Semi > Toshiba > Infineon Peak & Heavy load Part number Vspike S1NH3 69.6V BSC026N08NS5 77.5V NVMFS6H800N 87.3V ＜Voltage spike on secondary side（mearsure waveform）＞ S1NH3 NVMFS6H800N 87.3V 69.6V
به خواندن ادامه دهید
"Our aim is to continuously improve our SiC material and develop the next technology. We value Infineon as an excellent partner in this regard." The contract between Infineon and Showa Denko K.K. has …
به خواندن ادامه دهید
CoolSiC™ MOSFET offers a series of advantages. These include the lowest gate charge and device capacitance levels seen in SiC switches, no reverse recovery losses of the …
به خواندن ادامه دهید
II-VI made the first 200mm SiC back in 2015. So if you go by SiC real estate and area = pi x radius squared, you get about 1.75 more ICs per wafer by going to 200mm. II-Vi and WOLF are going full ...
به خواندن ادامه دهید
Amount of cash a business has after it has met its financial obligations such as debt and outstanding payments. 149.50M. -39.20%. Get the latest Infineon Technologies AG (IFX) real-time quote ...
به خواندن ادامه دهید
The Infineon portfolio of Silicon Carbide (SiC) products covers 600 V and 650 V to 1200 V Schottky diodes. The CoolSiC™ Schottky Diode solutions improve efficiency and solution costs with Silicon Carbide (SiC) discrete power CoolSiC™ Schottky diode portfolio from 600V to 1200V, which delivers highly reliable, industry-leading SiC performance.
به خواندن ادامه دهید
Vitesco has signed a cooperation agreement with Infineon for the supply of silicon carbide power semiconductors – according to the company against the background of the strong growth in electromobility. In addition, Vitesco and Infineon plan to collaborate on development. The cooperation with Infineon opens up "the possibility of additional ...
به خواندن ادامه دهید
The CoolSiC™ MOSFET 650 V M1 trench power device is Infineon's first generation of SiC trench MOSFETs. It is designed to address the needs of power supplies in the range from several hundred watts to tens of kilowatts, including server and telecom SMPS, solar inverters and EV charging. These applications, considering the overall
به خواندن ادامه دهید
The key parameter of the static output characteristic of a MOSFET is the total drain-source on-resistance R DS (on). We define its typical value for a CoolSiC™ MOSFET at room temperature and for a gate-source voltage (V GS) of 15 V and at the rated nominal DC current, as described on the left of figure 1. The threshold voltage V GS (th ...
به خواندن ادامه دهید
With 30 years of experience in silicon carbide (SiC) technology development, Infineon's portfolio of CoolSiC™ solutions addresses customer needs for smarter, more efficiency …
به خواندن ادامه دهید
パワーのドイツInfineon Technologies（インフィニオンテクノロジーズ）が、SiC（シリコンカーバイド）でをかける。2025をに、200mm（8インチ）のSiC（ウエハー）で、のにくSiCパワー（、パワー）をする。2020924にした ...
به خواندن ادامه دهید
It offers a scalable power range of 100 kW to 180 kW within the 750 V and 1200 V class. This product is Infineon's market-leading power module with a track record of more than one million pieces shipped for more than 20 electric vehicle platforms. The new CoolSiC version is based on Infineon's silicon carbide trench MOSFET structure.
به خواندن ادامه دهید
Robert Castellano Investing Group Leader Summary II-VI reinforced its role as a Silicon Carbide (SiC) wafers leader by inking a deal to supply IC leader Infineon …
به خواندن ادامه دهید
Munich, Germany – 6 May 2021 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has concluded a supply contract with the Japanese wafer manufacturer …
به خواندن ادامه دهید
このしいのは、SiCにするなパートナーシップをめるものです。このでは、レゾナックはインフィニオンにSiCのになSiCをし、10ののうちのシェアをカバーすることになります。
به خواندن ادامه دهید
introduced by Infineon. The CoolSiC MOSFET uses a trench structure showing commonly significantly higher channel conductivities due to less defects compared to the planar channel on the so called Si face of 4H-SiC. An investigation of different orientations of the trench sidewalls resulted in slightly different threshold voltages as well as
به خواندن ادامه دهید
A device design by Infineon has always been carefully oriented towards a beneficial cost-performance evaluation with a strong emphasis on exceptional reliability, which is what customers are used to getting from Infineon. The concept of Infineon's SiC-trench MOSFET follows the same philosophy. It combines a
به خواندن ادامه دهید
− The material itself with its specific defect structures, anisotropies, mechanical and thermal properties etc. − The larger bandgap with its implications on the density and dynamics of interface traps in MOS based devices − Up to about 10x higher electrical fields in operation within the material itself and at the outside interfaces, e.g. device edges (including new …
به خواندن ادامه دهید
Infineon's CoolSiC MOSFET 1200 V in a TO-247 package using .XT interconnection technology for packaging significantly enhances the thermal performance and reliability of the device. Together with a specific cooling design ("in which discrete devices are directly mounted on the heat sink without any electrical isolation with the …
به خواندن ادامه دهید
The HybridPACK Drive CoolSiC is a full-bridge module with a 1200-volt blocking voltage aimed at EV traction inverters. The power modules employ automotive CoolSiC trench MOSFET semiconductors. While sporting the same footprint as IGBT-based power modules, the HybridPACK Drive CoolSiC enables inverter designs to achieve up …
به خواندن ادامه دهید
The potential degradation in bipolar SiC elements: Recombination induced increase of R DS(on) and V SD Bipolar degradation might affect all SiC MOSFET technologies Effect is defect-driven and related to defects of substrate material Statistical effect: devices without these defects will not have bipolar degradation effect
به خواندن ادامه دهید
Rapid 1 and 2 power silicon diodes complement the existing high power 600V/650V diodes, filling the gap between the SiC diodes and emitter-controlled diodes. 650 V Rapid 1 Diode Infineon`s Rapid 1 diode family, with 1.35V temperature-stable forward voltage (V F), ensures the lowest conduction losses and by means of soft recovery keeps EMI ...
به خواندن ادامه دهید
Infineon Technologies designs and manufactures a range of semiconductor products across the automotive, power electronics, industrial power control, security IC, and IoT markets. It ranks among the ten largest semiconductor companies by market share. Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) …
به خواندن ادامه دهید
Munich, Germany – 3 May, 2023 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has signed an agreement with Chinese silicon carbide (SiC) supplier …
به خواندن ادامه دهید
The use of SiC based power semiconductor solutions has shown a huge increase over the last years. Driving forces behind this market development are the following trends: …
به خواندن ادامه دهید
Infineon already provides SiC-based products to more than 3,000 customers today. Used in a variety of applications, these semiconductors offer added value to the customer because of better system performance in terms of efficiency, size and cost compared to silicon-based solutions. Infineon's strategic "Product to System" approach …
به خواندن ادامه دهید
Infineon's strategic "Product to System" approach also facilitates the adoption of SiC-based semiconductors. Focus applications are industrial power supply, photovoltaic, transportation, drives, automotive and EV charging. Infineon is targeting revenues of $1 billion with SiC-based power semiconductors by the middle of the decade.
به خواندن ادامه دهید