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SiC MOSFETs capable of blocking extremely high voltages (up to 15kV); while dopant control for thin highly-doped epitaxial layers has helped enable low on-resistance 900V SiC MOSFET production. Device design and processing improvements have resulted in lower MOSFET specific on-resistance for each successive device generation.
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Figure 4: Device concepts for high voltages, comparison between silicon and SiC SiC MOSFETs in the landscape of modern power devices As sketched in the previous paragraph, SiC MOSFETs are used for the most part today in areas where IGBTs are the dominating component of choice. Figure 5 summarizes the major advantages of SiC …
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We report the successful demonstration of large current and high-speed switching properties of SiC V-groove trench gate MOSFETs (VMOSFETs). A drain …
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We report the successful demonstration of large current and high-speed switching properties of SiC V-groove trench gate MOSFETs (VMOSFETs). A drain current of 150 A (at VDS = 2 V and VGS = 18 V) and breakdown voltage of 960 V were achieved from a packaged 6 × 6 mm2 single chip. Moreover, short switching times of tr = 81 ns and tf = 32 ns were also …
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MOSFET cell pitch, which will reduce the channel density. Thus, the specific on-resistance (R on,sp) increases because the channel mobility is usually quite low for SiC MOSFET [17]. A conventional trench MOSFET (CT-MOSFET) with SBD is proposed in [18]. However, the SBD is formed at the bottom of the trench as shown in Fig. 1(a).
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Wide Bandgap Materials 4 Radical innovation for Power Electronics Si GaN 4H-SiC E g (eV) –Band gap 1.1 3.4 3.3 V s (cm/s) – Electron saturation velocity 1x10 72.2x10 2x107 ε r –dielectric constant 11.8 10 9.7 E c (V/cm) –Critical electric field 3x105 2.2x106 2.5x106 k (W/cm K) thermal conductivity 1.5 1.7 5 E c low on resistance E g low leakage, high Tj k …
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92 · Fast Switching SiC V-groove Trench MOSFETs 2. Low-Capacitance Design Based on Buried p-Grounded Structure A MOSFET is a device that has three terminals: gate, source, and drain. The gate voltage is used for on-off control of the MOSFET. When the gate is on, a large current can be passed between the source and the drain.
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MOSFET with a low defect density in the channel region. The characteristics of the 3rd quadrant are given in Figure 4. As pointed out before the MOSFET contains a body diode which can be used for hard commutation. Thus, it is not necessary to add an external and expensive additional SiC diode for freewheeling operation. The curves with a
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The next generation power modules using SiC-MOSFETs have been developed for over ten years. From our successful results, we have released SiC power modules which have been used in railway vehicles, industrial machines and home appliances, etc. Low on-resistance 3.3 kV SiC-MOSFETs have been realized by JFET …
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4H-SiC trench MOSFET with integrated fast recovery MPS diode Tianxiang Dai, Chun Wa Chan, Xc Deng, Huaping Jiang, Peter M. Gammon, Mike R. Jennings and Phil A. Mawby A 4H-SiC trench metal–oxide–semiconductor field-effect-transistor (MOSFET) design with an integrated merged PiN Schottky (MPS) diode is proposed.
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Tomoaki Hatayama's 34 research works with 281 citations and 806 reads, including: Edge Termination Design with Strong Process Robustness for 1.2 kV-class 4H-SiC Super Junction V-groove MOSFETs
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The body diode of a SiC MOSFET has a high voltage drop (about 4 V), but a low minority carrier lifetime. They have a significantly faster recovery and a lower recovery charge …
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In particular, SiC MOSFETs (metal oxide semicon- ductor field effect transistors) are being actively developed because they can achieve both low on-resistance and high- speed …
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In particular, V-groove MOSFETs using SiO 2 /4H-SiC (0338) MOS interfaces have the unique and excellent characterizations which maintain a high channel mobility of 80 cm 2 V −1 s −1 even under ...
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Abstract. Several edge termination structures for high voltage 4H-SiC devices compatible with a planar power MOSFET fabrication process are analyzed in this paper. The edge terminations' efficiency has been experimentally demonstrated on PiN diodes with breakdown voltage capabilities ranging from 2 to 5 kV, fabricated within a full power …
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4H-SiC trench MOSFETs with novel V-groove structures have been investigated. We have fabricated trench MOSFETs with the inclined 4H-SiC {0-33-8} …
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4H-SiC super junction, $0.63 mathrm{m}Omega text{cm}^{2}$ and 1170 V, V-groove trench MOSFETs (SJ-VMOSFET) were demonstrated. The specific on-resistance $(R_{text{on},text{sp}})$ of the SJ-VMOSFET is the lowest ever among all the reported SiC-MOSFETs with the blocking voltage $(B_{mathrm{v}})$ over 600 V. Superior …
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To get a fair comparison, the C-TMOS and the HJD-TMOS keep the same doping profiles and the closed device dimensions. The thickness of the epitaxial layer including the drift, the CSL, and the channel on the substrate is 9.2 μm and the doping concentration of the drift layer is 7.5 × 10 15 cm −3, respectively, for a 650 V rated …
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Two different structures are proposed for 1700 V rated voltage. The first design is the SiC MOSFET with center dielectric layer in the SiC/SiO 2 surface, which is divided into Device-A and Device-B based on different dielectric materials, as is shown in Fig. 1 (a) and (b). With the particularity of the first design, the capacitance (C gd) can be …
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Abstract: We developed V-groove trench gate SiC MOSFETs with grounded buried p + regions. An effective reduction in the feedback capacitance (Crss) and a fast …
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The Optimised Design and Characterizat ion of 1200 V / 2.0 m Ω cm² 4H-SiC V-groove . Trench MOSFETs, Proc. ISPSD 2015, pp. 85-88, Hong Kong 2015 ... For SiC-MOSFETs, a threshold voltage drift ...
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Sumitomo Electric has already developed V-groove metal-oxide-semiconductor field-effect transistors (VMOSFETs). The VMOSFETs use a particular plane orientation (0-33-8) for the channel that turns on/off the flow of electrons, forming an oxide film interface with low defects and achieving a low on-state resistance.
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Edge Termination Design with Strong Process Robustness for 1.2 kV-class 4H-SiC Super Junction V-groove MOSFETs
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A novel 4H–SiC trench MOSFET with Inverted-T groove beneath the gate trench (IT-UMOS) is proposed. The maximum oxide electric field during the blocking state and the gate-drain charge of IT-UMOS is significantly reduced due to the introduction of Inverted-T groove. The IT-UMOS boasts a lowest dynamic figure of merit (FOM) Ron,sp …
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The authors reported the DMOSFETs fabricated on the 4H-SiC (0-33-8) in ECSCRM2012 and the novel V-groove MOSFETs, having (0-33-8) on the trench sidewall in ICSCRM2013. In this paper, we applied ...
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p.477. 2 /820 V 4H-SiC Super Junction V-Groove Trench MOSFET p.483. 1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance p.489. 3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator and Body Diode p.493. 1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage ...
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A general review of the critical processing steps for manufacturing SiC MOSFETs, types of SiC MOSFETs, and power applications based on SiC power devices are covered in this paper. ..., 2665–2669. [Google Scholar] 2 $ /1170 V 4H-SiC Super Junction V-Groove Trench MOSFET. In Proceedings of the 2018 IEEE International …
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We report the successful demonstration of large current and high-speed switching properties of SiC V-groove trench gate MOSFETs (VMOSFETs). A drain current of 150 A (at V DS = 2 V and V GS = 18 V) and breakdown voltage of 960 V were achieved from a packaged 6 × 6 mm 2 single chip. Moreover, short switching times of t r = 81 ns …
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KAWASAKI--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed silicon carbide (SiC) MOSFETs [1] with low on-resistance and significantly reduced switching loss—about 20% lower than in its second-generation SiC MOSFETs.. Power devices are essential components for managing and reducing power consumption …
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We have developed V-groove trench gate SiC MOSFETs (VMOSFETs) with a double reduced surface field junction termination extensions structure (DR-JTEs) to …
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Full SiC Power Module with 4H-SiC V-groove Trench MOSFETs SUMITOMO ELECTRIC TECHNICAL REVIEW No. 96 APRIL 2023 90（2） As described above, the VMOSFET is a SiC MOSFET that can achieve both low on-resistance and high-speed operation, and can reduce both conduction loss and switching loss. 3. Design and Features of VMOSFET …
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Abstract: V-groove trench MOSFETs with the 4H-SiC{0-33-8} face as the trench sidewall for the channel region have been investigated. The on-resistance and breakdown voltage strongly depend on the aperture ratio of the buried p + regions. The threshold voltage is 2.3 V at 175°C, which shows the VMOSFETs have tolerability for an erroneous ignition …
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The SiC MOSFET shows lower power loss characteristics than Si MOSFET . ... $ / 1170 V 4H-SiC Super Junction V-Groove Trench MOSFET. Conference Paper. Dec 2018; T. Masuda; Y. Saito; T. …
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